Wafer holder for film deposition chamber

ABSTRACT

The present disclosure provides a flexible workpiece pedestal capable of tilting a workpiece support surface. The workpiece pedestal further includes a heater mounted on the workpiece support surface. The heater includes a plurality of heating sources such as heating coils. The plurality of heating sources in the heater allows heating the workpiece at different temperatures for different zones of the workpiece. For example, the workpiece can have a central zone heated by a first heating coil, a first outer ring zone that is outside of the central zone heated by a second heating coil, a second outer ring zone that is outside of the first outer ring zone heated by a third heating coil. By using the tunable heating feature and the tilting feature of the workpiece pedestal, the present disclosure can reduce or eliminate the shadowing effect problem of the related workpiece pedestal in the art.

BACKGROUND

In manufacturing semiconductors, film deposition chambers such aschemical vapor deposition (CVD) chambers and physical vapor deposition(PVD) chambers are typically used. Within these chambers, a wafer holderis used to support the wafer, heat the wafer using a heater connected tothe holder, and rotate the wafer during the deposition process. In thedeposition process, a target material that is located above the wafer isdeposited while the wafer holder supporting the wafer is rotatingcircularly along a plane, for example an x-y plane (where the x-y planeis parallel to the horizon or perpendicular to a gravity vector). Due tothe circular shape of the wafer and the position of the target material,some portions of the wafer (e.g., periphery of the wafer, locations nearthe edges of the wafer) uneven coverage by the deposited targetmaterials.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A is a cross-sectional view of a chamber structure including aworkpiece holder according to one embodiment of the present disclosure.

FIG. 1B is a cross-sectional view of a workpiece holder according to oneembodiment of the present disclosure.

FIG. 2 is a schematic view of a deposition of a target material onvarious locations of a workpiece according to one embodiment of thepresent disclosure.

FIG. 3A is a top view of a heater having a plurality of heating coilsaccording to embodiments of the present disclosure.

FIG. 3B is a top view of a heater having a plurality of heating zonesfor tuning the temperature of various locations on a workpiece accordingto embodiments of the present disclosure.

FIG. 4 is a flow chart of operating a workpiece holder to perform filmdeposition according to embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The device may be otherwise oriented (rotated 90 degrees orat other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

The various aspects of the present disclosure will be now detailed inconnection with the figures.

FIG. 1A is a cross-sectional view of a chamber structure 100 accordingto one embodiment of the present disclosure. The chamber structure 100includes a workpiece pedestal. The workpiece pedestal includes aworkpiece holder 110 may also be referred to as a holder 110. Theworkpiece pedestal is referred to as including the holder 110, a shaft112, a movable or adjustable joint 220, and a rotating mechanism 210.The specific components of the workpiece pedestal are further detailedin FIG. 1B.

Returning to FIG. 1A, the holder 110 supports a workpiece 115 (e.g.,silicon wafers, substrates, or the like) during the various processingon the workpiece 115 (e.g., film deposition process). The holder 110 is,for example, fabricated from ceramic, metal such as aluminum, stainlesssteel, or combinations thereof. A shutter disk 120 is positioned abovethe workpiece 115. Generally, a shutter disk 120 is used during cleaningof a target 130 to protect the holder 110 and other components adjacentand around the holder 110. For example, the shutter disk 120 ispositioned between the target 130 and the holder 110 to isolate thetarget 130 and other components to be cleaned during the cleaningprocess from other components within the chamber 100 which could bedamaged by cleaning of the target 130 and pasting materials. In oneembodiment, the shutter disk 120 is housed in an enclosure (not shown)attached adjacent to the chamber 100. The shutter disk 120 is connectedto a rotating arm (not shown) for moving the shutter disk 120 in ahorizontal direction or a vertical direction based on the stage and typeof the manufacturing process or cleaning process. For example, during acleaning process, the rotating arm may place the shutter disk 120 tooverlie the workpiece 115 (or overlie the holder 110) to protect theholder 110. In other examples such as during a deposition process, therotating arm may place the shutter disk 120 inside the enclosure inorder not to block the way between the target 130 and the holder 110.

The chamber structure 100 includes an RF (radio frequency) power circuit140 that is connected to the holder 110 to provide an RF bias voltage tothe workpiece 115 during processing. The RF power circuit 140 providesRF bias voltage to the holder 110 and the workpiece 115 so that they arepositively biased (in other embodiments, the holder 110 and theworkpiece 115 may be negatively biased). Further, the RF power circuit140 may be connected to other components within the chamber 100 and mayprovide RF bias voltage to the components.

The chamber structure 100 includes a DC power circuit 150 that isconnected to the target 130 and provides the target 130 with a DC biasvoltage. For example, in some embodiments in accordance with the presentdisclosure, the target 130 and the holder 110 are biased relative toeach other by a power source (DC or RF) to attract the target material130 to the workpiece 115 on the holder 110. Further, the DC powercircuit 150 may be connected to other components within the chamber 100and may provide DC bias voltage to the components.

The chamber structure 100 includes a gas supply 160 that controls thegas flow into the chamber 100. For example, in some embodiments inaccordance with the present disclosure, the gas supply 160 may provideinert gases such as argon (Ar) gas into the chamber 100 for formingplasma and for use during deposition. In further embodiments, variousgases may be supplied to the chamber 100 through the gas supply 160during etch cleaning, such as hydrogen, oxygen, fluorine-containinggases or other inert gases, depending on the materials to be removed.

The chamber structure 100 includes a vacuum pump 170 is connected to thechamber 100. The vacuum pump 170 is capable of creating a vacuum statein the chamber 100 during processing of the workpiece 115. The chamberstructure 100 includes a shielding 180 that surrounds the workpiece 115during processing and a cover ring 185 maintains the workpiece 115against the holder 110 during processing. The cover ring 185 issupported by a deposition ring 195.

The target 130 provides material to be deposited on the workpiece 115during, for example, a PVD process. A magnet 190 enhances uniformconsumption of the target material during processing. Plasma is formedbetween the target 130 and the workpiece 115 from the Ar gas supplied.Ions within the plasma are accelerated toward the target 130 and bombardthe target 130 to remove portions of the target material by dislodgingportions of the material from the target 130. The dislodged targetmaterial is attracted towards the workpiece 115 due to the voltage biasand deposits a film of target material on the workpiece 115.

A deposition ring 195 surrounds the holder 110. A cover ring 185positioned adjacent to the deposition ring 195 partially overlaps thedeposition ring 195. The cover ring 185 and the deposition ring 195protect the regions of the holder 110 that are not covered by theworkpiece 115 during processing (e.g., PVD process, such as sputteringor evaporation). The rest of the chamber 100 is protected by theshielding 180 that is adjacent to the cover ring 185. The cover ring 185and the deposition ring 195 reduce or minimize materials from the target130 depositing on the holder 110. During a PVD process, the Ar gas inthe chamber 100 is turned into a plasma state. That is, the plasma willhave positive Ar ions and electrons. The positive Ar ions will beattracted towards the negative plate where the target 130 is located(e.g., however, in other embodiments, the target 130 may be positivelybiased using the DC power circuit 150). This attraction force causes thepositive Ar ions to move towards the negative plate where the target 130is located. These ions impact the target 130 with force during theprocess. This force causes some atoms from the target surface to bedislodged from the target 130 and eventually deposit onto the workpiece115. If some of the dislodged materials from the target 130 comes incontact with the holder 110 and its surroundings (e.g., walls of theholder 110 and the periphery of the workpiece 115), dislodged materialscan deposit onto the holder 110, its surroundings or the periphery ofthe workpiece 115. The cover ring 185 and the deposition ring 195cooperate to reduce or eliminate materials from the target 130 fromcoming in contact with components of the chamber 100 upon whichdeposition of the target material 130 is undesired.

The deposition ring 195 can be removed to clean these target materialdeposits from the surfaces of the deposition ring 195. By employing thedeposition ring 195, the holder 110 does not have to be dismantled to becleaned after every PVD process. In addition, the deposition ring 195protects the edge or periphery surfaces of the holder 110 to reducetheir erosion by the energized plasma. In one embodiment, the depositionring 195 can be formed with a ceramic material, such as aluminum oxide.However, other materials may be used such as synthetic rubbers,thermoset, plastic, thermoplastics or any other material that meets thechemical compatibility, durability, pliability, sealing requirements,flexibility, application temperature, etc. For example, the ceramicmaterial may be molded and sintered using known technologies such asisostatic pressing, followed by machining of the molded sintered preformusing suitable machining methods to achieve the shape and dimensionsrequired. However, other known techniques for manufacturing may be used.

In one embodiment, the cover ring 185 is fabricated from a material thatcan resist erosion by the generated plasma, for example, a metallicmaterial such as stainless steel, titanium or aluminum, or a ceramicmaterial, such as aluminum oxide. However, other suitable materials maybe used such as synthetic rubbers, thermoset, plastic, thermoplastics orany other material that meets the chemical compatibility, durability,pliability, sealing requirements, flexibility, application temperature,etc.

The holder 110 according to the present disclosure is capable of moving,e.g., rotating, in the x-y plane as well as the z plane (see the xyzplane legend in FIG. 1B) and being tilted out of the x-y plane (see FIG.1B). The specific movement of the holder 110 will be detailed inconnection with FIG. 1B. In one or more embodiments, because of theflexible movement of the holder 110 which allows for adjustment of theplane that holder 110 is placed and in which holder 110 rotates, thedeposition ring 195 and the cover ring 185 may move or stretch inconjunction with the adjustment of the holder 110. For example,synthetic stretchable rubbers may be used for the cover ring 185 and thedeposition ring 195 so that at least one of the rings covers the holder110 during the manufacturing process despite the adjustment in theorientation, e.g., tilting out of the x-y plane, of the holder 110.

In accordance with embodiments of the present disclosure, a heater 200is provided on the holder 110. During operation, a workpiece 115 isplaced on top of the heater 200 that is arranged on a top surface of theholder 110. In one embodiment, the heater 200 may be incorporated as asingle, integrated structure as the holder 110. In this embodiment, theheater 200 will be located on the top surface of the holder 110 thatcontacts the workpiece 115 during the manufacturing process (e.g., PVDprocess). In other embodiments, the heater 200 may be a separatecomponent that is overlain on top surface of the holder 110. The heater200 is designed to heat the workpiece 115, e.g., to prepare theworkpiece 115 for processing. The specific structure of the heater 200will be detailed in connection with FIGS. 3A and 3B.

A determination circuit 205 is connected to the chamber 100 to performand execute the various steps of a manufacturing process carried out inchamber 100. In one embodiment, the determination circuit 205 transmitsan output signal to a movable joint 220 (see FIG. 1B) to control a tiltangle of the movable joint 220 and the holder 110 that is coupled to themovable joint 220. The determination circuit 205 is also configured totransmit an output signal to a rotating mechanism 210 (see FIG. 1B) tocontrol a rotation rate of the holder 110 that is coupled to therotating mechanism 210. The function of the determination circuit 205 isnot limited to the above. A determination circuit 205 includesmicroprocessor, central processing unit, controller circuitry and anyother integrated circuit capable of performing instructions. In oneembodiment, the determination circuit 205 may control various chambers,components within the chambers, robotic arms or moving means capable oftransferring a workpiece such as a wafer, and various sub-processorsincorporated within the chamber 100.

Further components such as a memory may be coupled to the determinationcircuit 205. The memory or computer-readable medium may be one or moreof readily available memories such as random access memory (RAM), readonly memory (ROM), hard disk, or any other form of digital storage,local or remote. The memory stores predetermined sets of processparameters and cooperates with the determination circuit 205 to executethe predetermined sets of process parameters necessary to carry outspecified processes. The determination circuit 205 selects a set ofprocess parameters for operating the PVD process chamber, including thetilt angle of the holder 110 and the rotation rate of the holder 110.For example, each set of process parameters may differ based on whichmaterial is being deposited on the workpiece 115. That is, the tiltangle for performing a process for forming aluminum pads (AlPad) on theworkpiece, a process of forming nickel (Ni) features on the workpiece, aprocess for forming copper barrier/seed layers, and other processes maydiffer from each other. Details of an AlPad process, Ni process, andCopper barrier/seed process are provided below. The process parametersfor performing a specific process may also depend on conditions such astemperature of the heater 200, temperature within the chamber 100,pressure within the chamber 100, gas pressure, and other variousconditions.

FIG. 1B is a cross-sectional view of a holder 110 according to oneembodiment of the present disclosure.

The holder 110 is connected to a rotating mechanism 210 through a shaft112. The movable joint 220 connects the shaft 112 to the holder 110.That is, the rotating mechanism 210 is connected to one end of the shaft112 and the movable joint 220 is connected to the other end of the shaft112. The rotating mechanism 210 includes a driving assembly including amotor, or any electronical/mechanical rotor which can be coupled to theshaft 112 to cause the holder 110 to rotate around a shaft axis (e.g.,rotating around x-y plane). Further, any suitable machinery can be usedas the rotating mechanism 210 for rotating shaft 112 at a selectedrotation rate and is not limited to the examples mentioned.

The movable joint 220 supports the holder 110 on top of shaft 112 suchthat the holder 110 is able to move or tilt out of an x-y plane andthereby causing the periphery of holder 110 to move in a z-axisdirection (e.g., vertical direction). In accordance with embodiments ofthe present disclosure, a workpiece holder 110 includes a workpiecesupport surface. This workpiece support surface is the surface of theholder 110 upon which a workpiece 115 is supported. This workpiecesupport surface defines a first plane. For instance, if the holder 110is not tilted, and maintains 0 degree or 180 degrees position relativeto vertical (i.e., a position parallel to the horizon or stated anotherway, perpendicular to a gravity vector), the first plane is parallel tothe x-y plane. By adjusting the movable joint 220, the holder 110 movesthe workpiece support surface out of the first plane. In one embodiment,the movable joint 220 includes a joint that has a 360 degree flexiblerotation, e.g., a stainless steel ball and socket joint. In anotherembodiment, the movable joint 220 includes a metal rotary joint capableof tilting the holder 110 with respect to the x-y plane, such as auniversal joint or cardan joint. In other embodiments, the movable joint220 may include a joint having six degrees of freedom (6DoF) whichrefers to the freedom of movement of a body in a three-dimensionalspace. For example, a holder supported by the movable joint 220 having6DoF is free to change position as forward/backward (surge), up/down(heave), left/right (sway) translation in three perpendicular axes(e.g., x, y, z axes), combined with changes in orientation throughrotation about three perpendicular axes, often termed yaw (normal axis),pitch (transverse axis), and roll (longitudinal axis).

In one embodiment, the movable joint 220 tilts the holder 110 by anangle based on the manufacturing process difference. For example,various equipment and structures are used during the manufacturingprocess. The hardware equipment each may have a set parameter configuredfor operating a certain step of the manufacturing process. The differentconfigurations each hardware may have for different processes cause thedifference in tilt angle. For instance, a first hardware equipmenthaving certain set parameters may require a first tilt angle forcompensating the shadowing effect in the workpiece. On the other hand, asecond hardware equipment having a different set parameters may requirea second tilt angle that is different form the first tilt angle forcompensating the shadowing effect in the workpiece. The deposition angleof the target material 130 as seen from the center of the workpiece 115is about 90 degrees. As shown from the center portion 340 of theworkpiece 115 in FIG. 2, 90 degrees means that the angle formed by thesurface of the workpiece 115 (e.g., 0 degrees or 180 degrees) and thedirection of the target material 130 (see arrows for the direction inwhich the target material 130 is deposited) is about 90 degrees, e.g.,perpendicular. However in other locations such as the left or west side330 of the workpiece 115 as shown in FIG. 2, based on the rotation rateof the holder 110, the deposition angle of the target material 130 beingdeposited on the left side 330 location is α. In accordance withembodiments of the present disclosure, the presence of the movable joint220 allows the holder 110 to be tilted at an angle α to compensate forthe angle from which the target material is deposited onto left side330, thereby reducing or avoiding the shadowing effect described belowwith reference to FIG. 2. In some embodiments, the tilt angle α may beincreased so as to adjust, e.g., increase or decrease the coverage rateat locations further towards the edge of the workpiece 115. The factorsrelated to controlling temperature of the workpiece 115 by use ofmultiple heating coils in the heater 200 in accordance with someembodiments of the present disclosure will be explained hereinafter.

A related holder in a related deposition chambers is not capable ofbeing moved to tilt the holder out of an x-y plane. For example, in arelated holder in the art, the holder rotates in an x-y plane but theholder is not able to tilt out of the x-y plane to a certain tilt angle.That is, in related art, the tilt angle of the holder is about 0 degreeor 180 degrees and is not adjustable. Accordingly, depending on whichportion of the workpiece 115 (such as a wafer) is receiving thedeposited target materials, a shadowing effect is observed. For example,the left (e.g., west) side and the right (e.g., east) side of aworkpiece is susceptible to what is known as a shadowing effect. Theshadowing effect occurs when certain features on the workpiece blocktarget materials from being deposited on portions of that feature orother features on the workpiece. In addition, the shadowing effectresults in an excessive amount of the target material depositing ontosome portions of features that are not in the “shadow” of the blockingfeatures on the workpiece. On the other hand, the center portion of theworkpiece often does not experience a shadowing effect and the targetmaterial is deposited in a uniform manner, e.g., uniform thickness, onfeatures in a center portion of the workpiece.

For example, when a workpiece surface is subjected to a target materialdeposition process, e.g., a PVD process, and the workpiece surfaceincludes a first spacer and a second spacer, the “shadow effect’ resultsin the target material being deposited onto the first spacer and/or thesecond spacer unevenly. In other words, the target material depositedonto portions of the first spacer and the second spacer will be sickerin some locations or in other locations. Depending upon the severity ofthe shadowing effect, there may be no target material deposited on someportions of the first spacer and/or second spacer. This shadowing effectis a function of the directional nature by which the target material isdeposited from the target. The uneven deposition of the target materialonto the workpiece may also be a product of the rate at which the holderrotates the workpiece. The variations in thickness of deposited targetmaterials across a wafer results in semiconductor devices produced fromthese wafers to have irregular and inconsistent electrical/electroniccharacteristics.

When the shadowing effect occurs on the peripheral portions of thewafer, the center of the wafer shows deposition of target materials touniform thicknesses. Due to its central location within the wafer, thetarget material is deposited at a substantially perpendicular angle tothe surface of the wafer, including the area between spacers.Accordingly, little or no shadowing effect occurs near the center of thewafer and the target material is deposited in a substantially uniformmanner.

On the other hand, the right or east portion of the wafer suffers fromthe same shadowing effect problem as the left or west portion of thewafer. For example, due to the height of the first spacer 260 and theangle from which the target materials originate, target material is notdeposited on some areas of the wafer. Due to the shadow effect, moretarget material is deposited on some portions of the wafer and lesstarget material is deposited on other portions of the wafer. As notedabove, this gives rise to portions of a wafer having non-uniformdeposits, e.g., non-uniform thickness of target material, which in turngives rise to unreliable operational characteristics in semiconductorchips manufactured from such wafer.

FIG. 2 is a schematic view of a deposition of a material on variouslocations of a wafer according to one embodiment of the presentdisclosure.

FIG. 2 illustrates a holder 110 according to embodiments of the presentdisclosure is capable of moving a workpiece supported by the holder byvirtue of a movable joint 220. The holder 110 is able to rotate in anx-y plane but is also able tilt at a certain tilt angle out of the x-yplane. The angle to which the holder is able to tilt ranges betweenabout 0 degree to 90 degrees. The particular angle the holder is tiltedto will depend in part upon the material being deposited on theworkpiece 115. Other various factors will also be considered indetermining the tilt angle of the holder 110, such as the temperatureapplied by the heater 200 and rotational speed of the holder. As shownin FIG. 2, a workpiece 115 supported by a holder 110 in accordance withembodiments of the present disclosure does not experience a substantialshadowing effect at the left or west side 330, right or east side 350 orcenter side 340. That is, substantially all portions of the workpiece115 are free from a shadowing effect and the target material is bedeposited in a uniform manner at substantially all locations within theworkpiece 115. This desirable absence of a shadowing effect is afunction of tilting the wafer out of the x-y plane to compensate for thedirection that the target materials deposited onto left/west side 330and right/east side 350 of the wafer.

Referring to FIG. 2, a first spacer 360 and a second spacer 370 areformed on the workpiece 115 on both the center 340 of wafer 115 and theleft side 330 of wafer 115. When the holder 110 is rotating at a certainrotation rate, the target material 130 may be deposited uniformly at theleft/west side 330 of the workpiece 115 by adjusting the angle by whichthe workpiece 115 is tilted out of the x-y plane. For example, if thedirection or the angle, relative to the vertical direction, at which thetarget material 130 is deposited onto the workpiece 115 is α, inaccordance with embodiments of the present disclosure, the movable joint220 provides the flexibility and freedom to tilt the holder 110 out ofthe x-y plane to that same angle α relative to the x-y plane. By tiltingthe holder 110 and workpiece 115 to an angle α, the workpiece 115 on theleft side 330, the direction at which the target material is depositedonto the workpiece 115 is perpendicular to the surface of the workpiece115. When the direction at which the target material is deposited ontothe workpiece is perpendicular to the surface of the workpiece 115, thepossibility of the first spacer 360 and the second spacer 370“shadowing” the deposition of the target material is reduced or removedand the coverage by the target material is complete and the deposits areof uniform or desired thickness. It should be understood, that referenceto a uniform thickness of the deposited target material is not limitedto situations where the thickness of the deposited target material isthe same at all locations. For example, in the embodiment illustrated inFIG. 2, the thickness of the deposited target material on the sides offirst spacer 360 and second spacer 370 differs from the thickness of thedeposited target material in the area 355 between first spacer 360 andsecond spacer 370 and the top of first spacer 360 and second spacer 370.Uniform thickness of deposited target material also refers to situationswhere the thickness of the deposited material on a portion of a feature,for example, a sidewall of first spacer 360 or a sidewall of secondspacer 370 is of a uniform thickness while the relative thickness of thedeposited target material on a sidewall of first spacer 360 differs fromthe thickness of the deposited target material on a sidewall of thesecond spacer 370.

Continuing to refer to FIG. 2, the target material deposited on thecenter side 340 of the workpiece 115 is uniformly deposited in the areas345 between the first spacer 360 and the second spacer 370. Due to itscentral location within the workpiece 115, the rotation rate of theholder 110 does not affect the angle in which the target material 130originates from. Because the target material 130 is deposited at asubstantially perpendicular angle to the first spacer 360, the secondspacer 370 and the area 345 between the first and second spacers 360,370, it is not necessary to tilt the holder 110 to compensate for ashadowing effect at center 340 of workpiece 115. In accordance withembodiments of the present disclosure, holder 110 tilts around itscenter axis, which in certain embodiments, is aligned with the centeraxis of the target material 130 in the center axis of holder 110 andshaft 112. With such configuration, when movable joint 220 is activatedto tilt holder out of an x-y plane, the distance by which the surface ofworkpiece 115 at center portion 340 moves in a vertical direction isless than the distance the surface of workpiece at left side 330 andright side 350 moves in a vertical direction.

Similar to the left side 330 of the workpiece 115, in accordance withembodiments of the present disclosure, when the workpiece 115 is tiltedout of the x-y plane, the right side 350 of the workpiece 115 is tiltedin a complementary way relative to the left side 330 of workpiece 115.For example, if the direction or angle, relative to the verticaldirection, at which the target material 130 is deposited onto theworkpiece 115 is β, in accordance with embodiments of the presentdisclosure, the movable joint 220 provides the flexibility and freedomto tilt the holder 110 out of the x-y plane to the same angle β(relative to the x-y plane). By tilting the holder 110 and workpiece 115to an angle β, the workpiece 115 on the right side 350, the direction inwhich the target materials is deposited onto the workpiece 115 isperpendicular to the surface of the workpiece 115. When the direction inwhich the target materials deposited onto the workpiece is perpendicularto the surface of the workpiece 115, the possibility of the first spacerand second spacer “shadowing” the deposition of the target material isreduced or removed and the coverage by the target material is completeand the deposits are of uniform or of a desired thickness. In otherwords, tilting of the holder 110 causes the surface of the holder 110and the workpiece to be perpendicular or orthogonal to the directionfrom which the target material 130 originates and is deposited onto theworkpiece. In accordance with embodiments of the present disclosure,when the angle of the holder/workpiece is adjusted in this manner,target material can be deposited onto areas 355 between the first spacer360 and the second spacer 370 uniformly. Accordingly, the thickness ofthe deposited target materials will be uniform across the first spacer360, second spacer 370, and the area 355 therebetween.

FIG. 3A is a top view of a heater having a plurality of heating coilsaccording to embodiments of the present disclosure. FIG. 3B is a topview of a workpiece having a plurality of heating zones for tuning thetemperature of various locations of the workpiece according toembodiments of the present disclosure.

Referring to FIG. 3A, a heater 200 according to the present disclosureis capable of controlling the temperature of a surface area of theheater 200 by zones. To heat the heater by zones having differenttemperatures, the heater 200 includes a plurality of heating coils. Theheating coils are arranged within the surface of the heater 200 to heata workpiece 115 to different temperatures at different zones as shown inFIG. 3B. In one embodiment, the heater 200 includes a first heating coil410 located at the center of the heater 200. The first heating coil 410increases the temperature of the heater 200 to heat the workpiece 115 ata corresponding location. The first heating coil 410 may increase thetemperature to a first temperature to heat a first zone 440 of theworkpiece 115 to the same temperature. The first zone 440 has a firstradius R1 and the first heating coil 410 may be arranged in the circulararea defined by the first radius R1. For example, in the illustratedembodiment, the first heating coil 410 is located within an innercircular area defined by the first radius R1. The present disclosureincludes embodiments wherein the first heating coil 410 is arrangeddifferently within the inner circular area defined by the first radiusR1. In some embodiments, the first zone 440 and the second zone 450partially overlap with each other, and the second zone 450 and the thirdzone 460 partially overlap with each other.

The heater 200 includes a second heating coil 420 located around thecircumference or the periphery of the first heating coil 410. The secondheating coil 420 increases the temperature of the heater 200 to heat theworkpiece 115 at a corresponding location. The second heating coil 420increases the temperature to a second temperature to heat a second zone450 of the workpiece 115 to the same temperature. The second zone 450 isin the area outside of the first radius R1 and within a second radiusR2. In the illustrated embodiment, the second heating coil 420 islocated within a first outer ring area defined by the area between thefirst radius R1 and the second radius R2. The present disclosureincludes embodiments wherein the second heating coil 420 is arrangeddifferently within the first outer ring area defined by the area betweenthe first radius R1 and the second radius R2.

The heater 200 includes a third heating coil 430 located around thecircumference or the periphery of the second heating coil 420. The thirdheating coil 430 increases the temperature of the heater 200 to heat theworkpiece 115 at a corresponding location. The third heating coil 430increases the temperature to a third temperature to heat a third zone460 of the workpiece 115 to the same temperature. The third zone 460 isin the area outside of the second radius R2 and within a third radiusR3. In the illustrated embodiment, the third heating coil 430 is locatedwithin a second outer ring area defined by the area between the secondradius R2 and the third radius R3. The third heating coil 430 isarranged adjacent to second heating coil 420. In the illustratedembodiment, the third heating coil 430 is arranged in the area outsideof the second radius R2 and within the third radius R3. That is, thethird heating coil 430 is located within a second outer ring areadefined by the area between the third radius R3 and the second radiusR2. The present disclosure includes embodiments wherein the thirdheating coil 430 is arranged differently within the second outer ringarea defined by the area between the second radius R2 and the thirdradius R3.

Other various arrangements of the heating coils may be employed and thearrangements are not necessarily fixated to the embodiments shown in thedrawing.

In one embodiment, the first, second, and third heating coils are formedintegral with the heater 200. Further, the heater 200 is arranged at afirst side of the holder 110 and formed integrally with the holder 110.In another embodiment, the heater 200 is removably attached to the firstside of the holder 110.

In one or more embodiments, the movable joint 220 tilts the holder 110out of the x-y plane and the plurality of heating coils on the heater200 are controlled based on instructions from the determination circuit205 which retrieves the process parameters from the memory (e.g.,certain tilt angles for certain processes, the temperatures of zonesbased on certain deposition materials, rotation speed of holder, etc.).For example, in accordance with at least some embodiments of the presentdisclosure, in order to achieve uniform deposition of target materials,the determination circuit 205 of the chamber 100 controls at least oneof the tilt angle of the holder 110, the rotation rate of the holder110, and/or the temperatures of the first, second, and third heatingcoils. In other examples, the determination circuit 205 of the chamber100 controls a combination of the tilt angle of the holder 110, therotation rate of the holder 110, the temperatures of the first, second,and third heating coils to reduce or eliminate the shadowing effect andproduce deposits of the target materials 130 of uniform or desiredthickness and coverage.

In one embodiment, the holder 110 according to the present disclosuremay be utilized in an AlPad deposition process on the workpiece 115.

When a holder 110 according to the present disclosure is used in anAlPad deposition process, the tilt angle of holder 110 is adjusted totilt the workpiece 115. This results in the left side of the workpiecebeing elevated or lowered and the right side of the workpiece beinglowered or elevated. Further, in accordance with embodiments of thepresent disclosure, the temperature of each left side, center, and rightside of the workpiece is controlled to further promote a uniformdeposition process. For example, the left side and the correspondinglocation having a similar radius on the right side is heated to about200° C. On the other hand, the center of the workpiece is heated to atemperature higher than the right and left side. For example, the centeris heated to temperature greater than about 200° C., e.g., about 250° C.By controlling the tilt angle as well as tuning the temperature forzones of the workpiece 115, non-uniform or non-existent deposition ofthe Al on portions of the workpiece is reduced or avoided, resulting indeposited target material with uniform thickness across substantiallyall locations of the workpiece 115 and high coverage rate.

In another embodiment, the holder 110 according to the presentdisclosure is utilized in a process to deposit Ni on the workpiece 115.Using the holder 110 according to the present disclosure in a processfor depositing Ni on a workpiece achieves uniform thickness of Nideposits across the workpiece 115. In accordance with this embodiment,the temperature of each left side, center, and right side of a workpieceis controlled to facilitate the uniform deposition on Ni onto theworkpiece. Similar to the AlPad deposition process, in the Ni process,the first heating coil controls the temperature of the first zone, thesecond heating coil controls the temperature of the second zone, thethird heating coil controls the temperature of the third zone and thetemperatures of these different is set to be the same or different. Inone embodiment, the temperatures of the zones may decrease as the zonesare located further away from the central part of the heater 200. Inother embodiments depositing materials other than Ni, the temperaturesof the zones may increase as the zones are located further away from thecentral part of the heater 200. In further embodiments, the temperaturesof the first zone, the second zone, and the third zone need not beincreased in a continuous manner. For example, the temperature of thesecond zone may be set to a higher temperature than the first zone, andthe temperature of the third zone may be set to a lower temperature thanthe second zone but a higher temperature than the first zone.

In another embodiment, the holder 110 according to the presentdisclosure is utilized in a Cu deposition process. Using the holder 110according to the present disclosure in a Cu deposition process producesCu deposits of uniform thickness across the workpiece 115. Further, thetemperature of each left side, center, and right side is controlled tofacilitate the uniform deposition of Cu by use of multiple heatingcoils.

FIG. 4 is a flow chart 500 of a method of depositing a target materialin a deposition chamber that includes a holder 110 according toembodiments of the present disclosure. At step S510, a workpiece 115 issupported on a workpiece holder 110. At step S520, the workpiece isrotated using the workpiece holder 110. At step S530, the workpieceholder 110 is tilted out of an x-y plane to a certain tilt angle before,during or after the rotation of the workpiece holder 110. At step S540,a heater mounted on the workpiece holder 110 is used to heat variouslocations of the workpiece to adjust the temperature of the workpiece115 at the various locations. The heater 200 includes multiple coilsbeneath the surface of the heater 200 which provide thermal energy toheat the workpiece 115 at different zones corresponding to the locationsof each coil. By utilizing these multiple coils in the heater 200, theworkpiece holder 110 can be tilted to a specific tilt angle relative toan x-y plane and control the temperature at various locations of theworkpiece 115. Controlling the tilt angle of the holder and controllingthe temperature of the workpiece mitigates the effect of “shadowing”which can result in uneven or non-existence coverage of portions of theworkpiece and also increases the uniformity of the target materialdeposited on the workpiece 115. In other embodiments, the tilting stepat S530 can be performed prior to the rotating step at step S520. In yetother embodiments, the temperature controlling step at S540, may beperformed prior to step S530 or S520. Other orders of performing thesteps of S520, S530, and S540 may be implemented. At step 550, thetarget material 130 is deposited onto the workpiece 115.

In one embodiment, the step S530 includes the step of tilting theworkpiece holder 110 to a first angle (e.g., angle α as shown in FIG. 2)to deposit materials of the target material 130 at a first edge (e.g.,left side 330) of the workpiece 115. The first edge is spaced apart froma central region (e.g., center side 340) of the workpiece 115. The stepS530 further includes the step of tilting the workpiece holder 110 to asecond angle (e.g., angle β as shown in FIG. 2) to deposit materials ofthe target material 130 at a second edge (e.g., right side 350) of theworkpiece 115. The second edge is spaced apart from the central regionof the workpiece 115 and the second edge is located opposite of thefirst edge. For example, the second edge may be a distance X away fromthe center of the workpiece holder 110. The first edge may also bedistance X away from the center of the workpiece holder 110 but islocated on a side of the workpiece that is opposite from the secondedge. In some embodiments, if the first edge and the second edge areequally distanced from the center (e.g., X away from the center), theangle α for the first edge and the angle β for the second edge will bethe same angle.

In one embodiment, the step S540 includes the step of providing a heater200 on the workpiece holder 110 and the heater 200 having a first zoneand a second zone on a first surface of the heater 200. The step S540further includes the step of tuning the first zone to a firsttemperature and the step of tuning the second zone to a secondtemperature. The second temperature may be different from the firsttemperature. For example, the first zone may be located at a center ofthe first surface of the heater, and the second zone may be arranged tosurround the first zone.

In one or more embodiments, the determination circuit 205 simultaneouslyor subsequently controls the thermal energy output by the heater 200 toprovide zones heated to the first and second temperatures and the tiltof the holder 110 to achieve uniform deposition of the target material130 onto the workpiece 115. In further embodiments, the heater 200includes a third zone capable of being heated by a third coil. In thisembodiment, the determination circuit 205 simultaneously or subsequentlycontrols the thermal energy output by the heater to provide zones heatedto first, second, and third temperatures and the tilt of the holder 110to achieve uniform deposition of the target material 130 on theworkpiece 115.

Embodiments in accordance with the present disclosure provide a flexibleworkpiece pedestal capable of tilting a workpiece support surface (e.g.,surface of the holder 110) out of an x-y plane to mitigate shadowingeffects. The workpiece pedestal further includes a heater 200 mounted onthe workpiece support surface. The heater 200 includes a plurality ofheating sources such as heating coils. The plurality of heating sourcesin the heater 200 allows heating different zones of the workpiece 115 todifferent temperatures. For example, the workpiece 115 can have acentral zone 440 heated by a first heating coil 410, a first outer ringzone 450 that is outside of the central zone 440 heated by a secondheating coil 420, a second outer ring zone 460 that is outside of thefirst outer ring zone 450 heated by a third heating coil 430. By usingthis tunable heating feature and the tilting feature of the workpiecepedestal, embodiments in accordance with the present disclosure reduceor eliminate the negative results produced by the shadowing effectobserved when related workpiece pedestal in the art are employed in adeposition process.

One aspect of the present disclosure provides a workpiece pedestal forprocessing a workpiece. The workpiece pedestal includes: a shaft havinga first end and a second end; a workpiece holder connected to the firstend of the shaft, the workpiece holder including a workpiece supportsurface for supporting a workpiece, the workpiece support surfacedefining a first plane; a movable joint between the shaft and theworkpiece holder, the movable joint including a movable joint surfaceand connecting the workpiece holder to the first end of the shaft, themovable joint being tiltable into and out of the first plane; and arotating mechanism connected to the second end of the shaft, therotating mechanism, in operation, rotating the shaft.

In one embodiment, the workpiece pedestal further includes: a heater onthe circular support region of the holder. The heater has a firstsurface and in use, contacts the workpiece. The heater has first,second, and third heating coils on the first surface, wherein the firstheating coil heats a first zone of the first surface, the second heatingcoil heats a second zone of the first surface, and the third heatingcoil heats a third zone of the first surface.

Another aspect of the present disclosure provides a film depositionchamber. The film deposition chamber includes: a workpiece pedestal, theworkpiece pedestal includes a shaft having a first end and a second end,the shaft configured to rotate along a shaft axis; a holder on the firstend of the shaft, the holder including a support region; a movable jointbetween the shaft and the holder, the movable joint configured to tiltthe holder; a rotating mechanism connected to the second end of theshaft to control a rotation rate along the shaft axis; and adetermination circuit connected to the workpiece pedestal toelectrically control movement of the movable joint and the rotatingmechanism.

Another aspect of the present disclosure provides a method. The methodincludes: supporting a workpiece on a workpiece holder within a materialdeposition chamber; rotating the workpiece holder; tilting the workpieceholder in response to an output of a determination circuit; controllinga temperature of the workpiece; and depositing a material on theworkpiece.

In one embodiment, the step of tilting the workpiece holder in responseto an output of a determination circuit includes: the step of tiltingthe workpiece holder to a first angle to deposit materials of the filmat a first edge of the workpiece, the first edge spaced apart from acentral region of the workpiece; and the step of tilting the workpieceholder to a second angle to deposit materials of the film at a secondedge of the workpiece, the second edge spaced apart from the centralregion of the workpiece and the second edge located opposite of thefirst edge.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. A workpiece pedestal for physical vapor deposition processing,comprising: a shaft having a first end and a second end; a workpieceholder connected to the first end of the shaft, the workpiece holderincluding a workpiece support surface for supporting a workpiece, theworkpiece support surface defining a first plane; a movable jointbetween the shaft and the workpiece holder, the movable joint includinga movable joint surface and connecting the workpiece holder to the firstend of the shaft, the movable joint being tiltable into and out of thefirst plane; and a rotating mechanism connected to the second end of theshaft, the rotating mechanism, in operation, rotating the shaft. 2-4.(canceled)
 5. The workpiece pedestal of claim 1, further comprising: aheater on a circular support region of the holder, the heater having afirst surface which, in use, contacts the workpiece, wherein the heaterhas first, second, and third heating coils on the first surface, andwherein the first heating coil heats a first zone of the first surface,the second heating coil heats a second zone of the first surface, andthe third heating coil heats a third zone of the first surface.
 6. Theworkpiece pedestal of claim 5, wherein a temperature of each of thefirst, second, and third zones can be controlled to a different set of arange of temperatures based on the respective first, second, and thirdheating coil. 7-20. (canceled)
 21. The workpiece pedestal of claim 1,wherein the movable joint tilts the workpiece holder based on a rotationrate of the shaft.
 22. The workpiece pedestal of claim 21, wherein themovable joint is tiltable to about 0 to 90 degrees out of the firstplane.
 23. The workpiece pedestal of claim 21, wherein the movable jointhas six degrees of freedom of movement in a three-dimensional space. 24.The workpiece pedestal of claim 5, wherein the first zone heated by thefirst heating coil is located on a center of the first surface, thesecond zone heated by the second heating coil is adjacent to the firstzone and outside a circumference of the first zone, the third zoneheated by the third heating coil is adjacent to the second zone and islocated along an edge of the first surface of the heater.
 25. Theworkpiece pedestal of claim 5, wherein the first zone and the secondzone partially overlap with each other, and the second zone and thethird zone partially overlap with each other.
 26. A workpiece pedestalfor physical vapor deposition processing, comprising: a shaft having afirst end and a second end, the shaft configured to rotate along a shaftaxis; a holder on the first end of the shaft, the holder including asupport region; a movable joint between the shaft and the holder, themovable joint configured to tilt the holder; and a rotating mechanismconnected to the second end of the shaft to control a rotation ratealong the shaft axis, wherein the movable joint is configured to tilt ata tilt angle which concurrently tilts the holder attached to the movablejoint to a corresponding tilt angle.
 27. The workpiece pedestal of claim26, wherein the movable joint is capable of tilting left and right withrespect of the shaft axis.
 28. The workpiece pedestal of claim 26,further comprising: a heater on the support region of the holder, theheater having a first surface which, in use, contacts the workpiece,wherein the heater has first, second, and third heating coils on thefirst surface, and wherein the first heating coil heats a first zone ofthe first surface, the second heating coil heats a second zone of thefirst surface, and the third heating coil heats a third zone of thefirst surface.
 29. The workpiece pedestal of claim 28, wherein the firstzone heated by the first heating coil, the second zone heated by thesecond heating coil, and the third zone heated by the third heating coilis configured to be heated at a different temperature from each other.30. The workpiece pedestal of claim 28, wherein the first zone heated bythe first heating coil is located on a center of the first surface, thesecond zone heated by the second heating coil is adjacent to the firstzone and outside a circumference of the first zone, and the third zoneheated by the third heating coil is adjacent to the second zone and islocated along an edge of the first surface of the heater.
 31. Aworkpiece pedestal for physical vapor deposition processing, comprising:a shaft having a first end and a second end, the shaft configured torotate along a shaft axis; a holder on the first end of the shaft, theholder including a circular support region, the circular support regiondefining a first plane; a first heating element and a second heatingelement adjacently located to the support region of the holder; amovable joint connected at the second end of the shaft, the movablejoint configured to tilt the holder at a tilt angle; and a rotatingmechanism connected to the second end of the shaft to control a rotationrate along the shaft axis.
 32. The workpiece pedestal of claim 31,wherein the first heating element is located at a first zone of thecircular supporting region and the second heating element is located ata second zone of the circular supporting region.
 33. The workpiecepedestal of claim 32, wherein the first zone includes a central area ofthe circular supporting region, and the second zone includes an outerarea of the first zone.
 34. The workpiece pedestal of claim 33, whereinthe first heating element includes a first heating coil having a spiralshape, and the second heating element includes a second heating coilhaving a spiral shape.
 35. The workpiece pedestal of claim 31, whereinthe movable joint tilts the workpiece holder based on a rotation rate ofthe shaft.
 36. The workpiece pedestal of claim 31, wherein the movablejoint is tiltable to about 0 to 90 degrees out of the first plane. 37.The workpiece pedestal of claim 31, wherein the movable joint has sixdegrees of freedom of movement in a three-dimensional space.